Power dissipation 25c dc current gain hfe 4 a vce sat 1. This publication supersedes and replaces all information previously supplied. Vishay, disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. Classification of h fei 78 112 96 5 112 166 144 202 190300 300400 rank range 6491 electrical characteristics unless otherwise specified. Ss90 npn epitaxial silicon transistor mouser electronics. Parameter symbol ratings unit collectorbase voltage vcbo30 v collectoremitter voltage vceo20 v emitterbase voltage vebo5 v collector current ic700 ma. Specifications may change in any manner without notice.
If a mica insulation is used, the thermal resistance of the mica washer must be added, which amounts to about 0. The useful dynamic range extends to 100 ma as a switch and to 100 mhz as an amplifier. Td2401 date published july 1995 p printed in japan 2sc5010 description the 2sc5010 is an npn epitaxial silicon transistor designed for use in low noise and small signal amplifiers from vhf band to l band. Ldmos rf power field effect transistor 90 w, 869960 mhz. I absolute maximum rating ta25c, unless otherwise specified parameter symbol ratings unit collectorbase voltage vcbo 30 v collectoremitter voltage vceo 20 v emitterbase voltage vebo 5 v collector current ic 700 ma sot23 350 mw. Mje243 complementary power transistors on semiconductor. Savantic semiconductor silicon npn power transistors product specification 2sd1554 description. A listing of scillcs productpatent coverage may be accessed at. Texas instruments transistor and diode databook 1st ed 1973 datasheets for diodes from 1n251 on and transistors from 2n117 on acrobat 7 pdf 34. Preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a. Normalized maximum transient thermal impedance note h.
Symbol vds vgs idm iar ear tj,t stg symbol typ max 17. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. High voltage npn power transistor for high definition and new super. Base voltage 2n6515 2n6517, 2n6520 vcbo 250 350 vdc. Toshiba transistor silicon pnp epitaxial type pct process 2sa10 color tv verttical deflection output applications power switching applications high voltage. Semiconductor data sheets andor specifications can and do vary in different. Free devices maximum ratings rating symbol value unit collector. To92 plasticencapsulate transistors s9018 transistor npn features z high current gain bandwidth product maximum ratings t a25. Parameter symbol ratings unit collectorbase voltage vcbo30 v collectoremitter voltage vceo20 v emitterbase voltage vebo5 v collector current ic700. A733 pnp epitaxial silicon transistor elite enterprises h. Absolute maximum ratings t a 25c unless otherwise noted. I absolute maximum ratings parameter symbol ratings unit collectoremitter voltage vceo 400 v collectorbase voltage vcbo 600 v emitter base voltage vebo 7 v collector current ic 200 ma collector power dissipation sot89 pc 550 mw to92 750.
B669 an1060 b642 motorola rs 7812 transistor bf64 m68hc11 68hc711e9 transistor b673 datasheet 7812 text. See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. S90 datasheet, jiangsu changjiang electronics technology co,ltd sot23 plasticencapsulate transistors sot23 s90lt1 features 1.
This device utilizes emitter ballasting and is extremely stable and capable of withstanding high vswr under rated operating conditions. Aod454 nchannel enhancement mode field effect transistor. Transistor datasheet, transistor pdf, transistor data sheet, datasheet, data sheet, pdf home all manufacturers by category part name, description or manufacturer contain. Transistor datasheet, transistor pdf, transistor data sheet, datasheet, data sheet, pdf. Npn general purpose amplifier this device is designed as a general purpose amplifier and switch. Fairchild semiconductor reserves the right to make changes at.
Datasheets cmdz18l, fmmt2222a, kst2222a, mmbt2222a, mmbt2222at. Fairchild semiconductor reserves the right to make changes at any time without notice to improve design. Toshiba transistor silicon pnp epitaxial type pct process. Select the part name and then you can download the datasheet in pdf format. Emitter voltage 2n6515 2n6517, 2n6520 vceo 250 350 vdc collector. Since the distribution of heat in the transistor crystal is not uniform and depends on voltage and. Pdf an1060d an1060 m68hc11 b627 b669 an1060 b642 motorola rs 7812 transistor bf64 68hc711e9 transistor b673 datasheet 7812. Free packages are available maximum ratings rating symbol value unit collector. E absolute maximum rating ta25c, unless otherwise specified. B669 an1060 b642 motorola rs 7812 transistor bf64 m68hc11 68hc711e9 transistor b673 datasheet 7812. Typical parameters which may be provided in scillc data sheets andor specifications can and. Specification mentioned in this publication are subject to change without notice. Pnp general purpose transistors in a small sot23 to236ab surfacemounted.
C3150 datasheet pdf 800v, npn power transistor mospec, 2sc3150 datasheet, c3150 pdf, c3150 pinout, c3150 equivalent, data, circuit, c3150 schematic. Irfp140n intersil datasheet pdf integrated circuits, transistor, semiconductors search and datasheet pdf download site other pdf no available. Sep 18, 2019 c3150 datasheet pdf 800v, npn power transistor mospec, 2sc3150 datasheet, c3150 pdf, c3150 pinout, c3150 equivalent, data, circuit, c3150 schematic. I absolute maximum ratings parameter symbol ratings unit collectoremitter voltage vceo 400 v collectorbase voltage vcbo 600 v emitter base voltage vebo 7 v collector current ic 200 ma collector power dissipation. Typical parameters which may be provided in scillc data sheets andor specifications can and do vary in. Classification of rank range hfe1 120200 200350 300400 electrical characteristics tamb250c unless otherwise specified typ max 0. Directions for determining the thermal resistance rths for cooling fins can be found on page 11. B605 transistor datasheet, cross reference, circuit and application notes in pdf format. C3150 datasheet pdf 800v, npn power transistor mospec. Npn silicon transistor pin connection descriptions switching application interface circuit and driver circuit application features with builtin bias resistors simplify circuit design reduce a quantity of parts and manufacturing process high packing density. Ck705 diode e1110 me1120 te1088 ecg semiconductor replacement guide cs1237 1n733a 1n942 delco dtg110b transistor text. Preliminary datasheet r07ds0432ej0300 2sc12ak previous. Toshiba transistor silicon npn epitaxial type 2sc2878.
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